CTL0196PS-R3 mosfet equivalent, p-channel mosfet.
* Drain-Source Breakdown Voltage VDSS -60 V
* Drain-Source On-Resistance
RDS(ON) 170mΩ, at VGS= -10V, ID= -1.8A RDS(ON) 200mΩ, at VGS= -4.5V, ID= -1.4A
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* Con.
* Power Management
* Battery Powered System
* DC/DC Converter
* Load Switch
* DSC
* LCD Display .
The CTL0196PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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