CTL0036NS-R3 mosfet equivalent, n-channel mosfet.
* Drain-Source Breakdown Voltage VDSS 60 V
* Drain-Source On-Resistance
RDS(ON) 3.0Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.0Ω, at VGS= 4.5V, IDS= 200mA
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Description
The CTL0036NS-R3 is the N-Channe.
The CTL0036NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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