CTL015NS10-R3 mosfet equivalent, n-channel mosfet.
* Drain-Source Breakdown Voltage VDSS 105 V
* Drain-Source On-Resistance
RDS(ON) 230mΩ, at VGS= 10V, ID= 1.5A RDS(ON) 275mΩ, at VGS= 4.5V, ID= 1.0A
℃
* Continu.
* Power Management
* LCD Display inverter
* DC/DC Converter
* Load Switch
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Schematic
Dr.
The CTL015NS10-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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