CTL0035NS-R3 mosfet equivalent, n-channel mosfet.
* Drain-Source Breakdown Voltage VDSS 50 V
* Drain-Source On-Resistance
RDS(ON) 1.3Ω, at VGS= 10V, ID= 0.2A RDS(ON) 1.4Ω, at VGS= 5V, ID= 0.2A RDS(ON) 1.6Ω, at VG.
* DC/DC Converter
* Load Switch
* LCD Display inverter
* Power Management
Description
The CTL0035NS-R3 .
The CTL0035NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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