CTL0203PS-R3 datasheet, mosfet equivalent, CT Micro

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Features and benefits

* Drain-Source Breakdown Voltage VDSS -30 V
* Drain-Source On-Resistance RDS(ON) 160mΩ, at VGS= -4.5V, ID= -1.6A RDS(ON) 110mΩ, at VGS= -10V, ID= -2.0A ℃
* Con.

Application

* Power Management
* Portable Equipment
* Battery Powered System
* Load Switch Package Outline Schemat.

Description

The CTL0203PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are .

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