CTL0266NS-R3 mosfet equivalent, n-channel mosfet.
* Drain-Source Breakdown Voltage VDSS -20 V
* Drain-Source On-Resistance
RDS(ON) 82m, at VGS= 10V, ID= 2.6A RDS(ON) 96m, at VGS= 4.5V, ID= 2.1A
* Continuous.
* Power Management
* Lithium Ion Battery
Description
The CTL0266NS-R3 is the N-Channel logic enhancement mode p.
The CTL0266NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are .
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