CTL0322PS-R3 datasheet, mosfet equivalent, CT Micro

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 784.31KB)

Features and benefits

* Drain-Source Breakdown Voltage VDSS -20 V
* Drain-Source On-Resistance RDS(ON) 55mΩ, at VGS= -4.5V, ID= -3.2A RDS(ON) 70mΩ, at VGS= -2.5V, ID= -2.4A RDS(ON) 100.

Application

* Power Management
* Lithium Ion Battery
* High-Side Switching Package Outline Schematic Drain Drain Ga.

Description

The CTL0322PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Applications
.

Image gallery