CTL0383NS-R3 datasheet, mosfet equivalent, CT Micro

Features and benefits

* Drain-Source Breakdown Voltage VDSS 30 V
* Drain-Source On-Resistance RDS(ON) 48m, at VGS= 10V, ID= 3.4A RDS(ON) 54m, at VGS= 4.5V, ID= 2.7A RDS(ON) 75m, at .

Application

* Power Management
* Lithium Ion Battery Package Outline Schematic Drain Gate Source Drain Gate Source CT.

Description

The CTL0383NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are .

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