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BLF573 - Power LDMOS transistor

Description

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.

Table 1.

Features

  • Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA:.
  • Average output power = 300 W.
  • Power gain = 27.2 dB.
  • Efficiency = 70 %.
  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF and VHF band).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Ha.

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Datasheet Details

Part number BLF573
Manufacturer Ampleon
File Size 408.48 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF573 Datasheet

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Full PDF Text Transcription

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BLF573; BLF573S HF / VHF power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation f VDS PL Gp D (MHz) (V) (W) (dB) (%) CW 225 50 300 27.2 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits  Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA:  Average output power = 300 W  Power gain = 27.
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