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BLF573; BLF573S
HF / VHF power LDMOS transistor
Rev. 3 — 8 July 2010
Product data sheet
1. Product profile
1.1 General description
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
Table 1. Production test information
Mode of operation f
VDS
PL
Gp
ηD
(MHz)
(V)
(W) (dB) (%)
CW
225 50
300 27.2 70
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: Average output power = 300 W Power gain = 27.
BLF573 Datasheet
