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BLF645
Broadband power LDMOS transistor
Rev. 01 — 27 January 2010
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Product data sheet
1. Product profile
1.1 General description
A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.
Table 1. Typical performance RF performance at Th = 25 °C in a common source test circuit. Mode of operation CW, class-AB 2-tone, class-AB f (MHz) 1300 1300 VDS (V) 32 32 PL (W) 100 PL(PEP) (W) 100 Gp (dB) 18 18 ηD (%) 56 45 IMD (dBc) −32
1.2 Features
CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.
BLF645 Datasheet
