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BLF642 - Broadband power LDMOS transistor

Description

A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications.

The transistor is suitable for the frequency range HF to 1400 MHz.

The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

Features

  • CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.2 A :.
  • Average output power = 35 W.
  • Power gain = 19 dB.
  • Drain efficiency = 63 %.
  • 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.2 A :.
  • Average output power = 17.5 W.
  • Power gain = 19 dB.
  • Drain efficiency = 48 %.
  • Intermodulation distortion = 28 dBc.
  • Integrated ESD protection.
  • Excellent.

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Full PDF Text Transcription

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BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF performance at Th = 25 C in a common source test circuit. Mode of operation f VDS PL (MHz) (V) (W) CW, class-AB 1300 32 35 2-tone, class-AB 1300 32 17.5 Gp (dB) 19 19 D IMD (%) (dBc) 63 48 28 1.2 Features and benefits  CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.
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