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DataSheet.in
BLF6G10L-40BRN
Power LDMOS transistor
Rev. 01 — 9 August 2010 Preliminary data sheet
1. Product profile
1.1 General description
40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA[1]
[1]
f (MHz) 791 to 821
VDS (V) 28
PL(AV) (W) 2.5
Gp (dB) 23.0
ηD (%) 15.0
ACPR (dBc) −42.5
Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.
BLF6G10L-40BRN Datasheet
