Click to expand full text
www.DataSheet4U.com
BLF6G10LS-135R
Power LDMOS transistor
Rev. 01 — 17 November 2008 Product data sheet
1. Product profile
1.1 General description
135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 869 to 894
VDS (V) 28
PL(AV) (W) 26.5
Gp (dB) 21.0
ηD (%) 28.0
ACPR (dBc) −39[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.
BLF6G10LS-135R Datasheet
