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BLF6G10LS-200RN - Power LDMOS transistor

Download the BLF6G10LS-200RN datasheet PDF. This datasheet also covers the BLF6G10-200RN variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a class-AB production test circuit.

Features

  • Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA:.
  • Average output power = 40 W.
  • Power gain = 20 dB.
  • Efficiency = 28.5 %.
  • ACPR = 39 dBc.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF6G10-200RN-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF6G10LS-200RN
Manufacturer Ampleon
File Size 363.92 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF6G10LS-200RN Datasheet

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Full PDF Text Transcription

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BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 869 to 894 28 40 20 28.5 ACPR (dBc) 39[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.
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