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BLF6G13LS-250PG - Power LDMOS transistor

Download the BLF6G13LS-250PG datasheet PDF. This datasheet also covers the BLF6G13L-250P variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.

Table 1.

Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.

Features

  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF6G13L-250P-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF6G13LS-250PG
Manufacturer Ampleon
File Size 394.98 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF6G13LS-250PG Datasheet

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Full PDF Text Transcription

Click to expand full text
BLF6G13L-250P; BLF6G13LS-250P(G) Power LDMOS transistor Rev. 5. — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit. Test signal f VDS PL(1dB) Gp D (GHz) (V) (W) (dB) (%) CW 1.3 50 250 17 56 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
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