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BLF578
Power LDMOS transistor
Rev. 01 — 11 December 2008 Objective data sheet
1. Product profile
1.1 General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Table 1. Production test information f (MHz) pulsed RF 225 VDS (V) 50 PL (W) 1200 Gp (dB) 24 ηD (%) 70
Mode of operation
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.
BLF578 Datasheet
