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BLF578XRS - Power LDMOS transistor

Download the BLF578XRS datasheet PDF. This datasheet also covers the BLF578XR variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band.

Features

  • Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:.
  • Output power = 1400 W.
  • Power gain = 23.5 dB.
  • Efficiency = 69 %.
  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 500 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoH.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF578XR-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BLF578XRS Power LDMOS transistor Ampleon
BLF578XR Power LDMOS transistor Ampleon
BLF578 Power LDMOS transistor Ampleon
BLF578 Power LDMOS transistor NXP Semiconductors
BLF571 Power LDMOS transistor Ampleon

Other Datasheets by NXP Semiconductors

Part Number Description
BLF578XR Power LDMOS transistor
BLF574XR Power LDMOS transistor
BLF574XRS Power LDMOS transistor
BLF521 UHF power MOS transistor
BLF522 UHF power MOS transistor

Full PDF Text Transcription

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BLF578XR; BLF578XRS Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using NXP's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance. Table 1. Application information Test signal pulsed RF f (MHz) 225 VDS PL (V) (W) 50 1400 Gp (dB) 23.5 D (%) 69 1.2 Features and benefits  Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:  Output power = 1400 W  Power gain = 23.
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