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BLF578XR; BLF578XRS
Power LDMOS transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.
Table 1. Application information Test signal
pulsed RF
f (MHz) 225
VDS
PL
(V) (W)
50 1400
Gp (dB) 23.5
D (%) 69
1.2 Features and benefits
Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with of 20 %: Output power = 1400 W Power gain = 23.
BLF578XRS Datasheet
