Datasheet4U Logo Datasheet4U.com

BLF578 - Power LDMOS transistor

Description

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.

Table 1.

Features

  • Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:.
  • Output power = 1200 W.
  • Power gain = 24 dB.
  • Efficiency = 71 %.
  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (10 MHz to 500 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (R.

📥 Download Datasheet

Datasheet Details

Part number BLF578
Manufacturer Ampleon
File Size 405.81 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF578 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLF578 Power LDMOS transistor NXP Semiconductors
BLF578XR Power LDMOS transistor NXP
BLF578XRS Power LDMOS transistor NXP
BLF571 HF / VHF power LDMOS transistor NXP Semiconductors
BLF573 HF / VHF power LDMOS transistor NXP Semiconductors

Other Datasheets by Ampleon

Part Number Description
BLF578XR Power LDMOS transistor
BLF578XRS Power LDMOS transistor
BLF571 Power LDMOS transistor
BLF573 Power LDMOS transistor
BLF573S Power LDMOS transistor

Full PDF Text Transcription

Click to expand full text
BLF578 Power LDMOS transistor Rev. 4 — 1 December 2016 Product data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Application information Mode of operation CW pulsed RF f (MHz) 108 225 VDS PL (V) (W) 50 1000 50 1200 Gp (dB) 26 24 D (%) 75 71 1.
Published: |