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BLF521 - UHF power MOS transistor

Description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range.

The transistor is encapsulated in a 4-lead, SOT172D studless envelope, with a ceramic cap.

All leads are isolated from the mounting base.

Features

  • High power gain.
  • Easy power control.
  • Gold metallization.
  • Good thermal stability.
  • Withstands full load mismatch.
  • Designed for broadband operation. 4 g MBB072 BLF521 PIN.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLF521 UHF power MOS transistor Product specification November 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch • Designed for broadband operation. 4 g MBB072 BLF521 PIN CONFIGURATION ook, halfpage 1 2 3 d s DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT172D studless envelope, with a ceramic cap. All leads are isolated from the mounting base. PINNING - SOT172D PIN 1 2 3 4 gate drain source DESCRIPTION source Top view MSB007 Fig.
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