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BLF542 - UHF power MOS transistor

Description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the UHF frequency range.

The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap.

All leads are isolated from the flange.

Features

  • High power gain.
  • Easy power control.
  • Gold metallization.
  • Good thermal stability.
  • Withstands full load mismatch.
  • Designed for broadband operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch • Designed for broadband operation. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange.
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