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BLF544 - UHF power MOS transistor

Description

DESCRIPTION N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap.

All leads are isolated from the flange.

A marking code showing gate-source voltage (VGS) information is provided for matched pair applications.

Features

  • High power gain.
  • Easy power control.
  • Good thermal stability.
  • Gold metallization ensures excellent reliability.
  • Designed for broadband operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF544 UHF power MOS transistor Product specification Supersedes data of October 1992 1998 Jan 21 Philips Semiconductors Product specification UHF power MOS transistor FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability • Designed for broadband operation. APPLICATIONS • Communication transmitters in the UHF frequency range. handbook, halfpage BLF544 PINNING - SOT171A PIN 1 2 3 4 5 6 SYMBOL s s g d s s source source gate drain source source DESCRIPTION 2 4 6 d DESCRIPTION N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange.
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