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BLF574XRS - Power LDMOS transistor

Download the BLF574XRS datasheet PDF. This datasheet also covers the BLF574XR variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band.

Features

  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 500 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF574XR-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF574XRS
Manufacturer Ampleon
File Size 389.46 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF574XRS Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLF574XRS Power LDMOS transistor NXP
BLF574XR Power LDMOS transistor NXP
BLF574 HF / VHF power LDMOS transistor NXP Semiconductors
BLF571 HF / VHF power LDMOS transistor NXP Semiconductors
BLF573 HF / VHF power LDMOS transistor NXP Semiconductors

Other Datasheets by Ampleon

Part Number Description
BLF574XR Power LDMOS transistor
BLF574 Power LDMOS transistor
BLF571 Power LDMOS transistor
BLF573 Power LDMOS transistor
BLF573S Power LDMOS transistor

Full PDF Text Transcription

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BLF574XR; BLF574XRS Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF574 using Ampleon's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance. Table 1. Application information Test signal f (MHz) CW 225 pulsed RF 225 VDS PL Gp D (V) (W) (dB) (%) 50 600 23.5 74.5 50 600 24 74.7 1.
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