-30V/ -12A,RDS(ON)=28mΩ@VGS=-10V -30V/ -10A,RDS(ON)=37mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power M.

Pin Description ( TO-252-2L ) AFP3485 30V P-Channel Enhancement Mode MOSFET Features -30V/ -12A,RDS(ON)=28mΩ@VGS=-10V .

AFP3485, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts