AFN2448WS mosfet equivalent, n-channel enhancement mode mosfet.
z 20V/3.0A,RDS(ON)=11mΩ@VGS=4.5V z 20V/3.0A,RDS(ON)=13mΩ@VGS=2.5V z 20V/3.0A,RDS(ON)=20mΩ@VGS=1.8V z Super high density cell design for extremely
low RDS (ON) z ESD Prote.
Pin Description ( DFN2X2-6L )
AFN2448WS
20V N-Channel Enhancement Mode MOSFET
Features
z 20V/3.0A,RDS(ON)=11mΩ@VGS=4.5.
AFN2448WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.
Image gallery
TAGS
Download