AFN2024S mosfet equivalent, n-channel enhancement mode mosfet.
20V/ 9A,RDS(ON)=32mΩ@VGS=4.5V 20V/ 7A,RDS(ON)=35mΩ@VGS=2.5V 20V/ 5A,RDS(ON)=45mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) TO-252-2L package desi.
Pin Description ( TO-252-2L )
AFN2024S
20V N-Channel Enhancement Mode MOSFET
Features
20V/ 9A,RDS(ON)=32mΩ@VGS=4.5V 20.
AFN2024S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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