20V/ 10A,RDS(ON)=14mΩ@VGS=4.5V 20V/ 8A,RDS(ON)=17mΩ@VGS=2.5V 20V/ 5A,RDS(ON)=21mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) TO-252-2L package des.

Pin Description ( TO-252-2L ) AFN2014 20V N-Channel Enhancement Mode MOSFET Features 20V/ 10A,RDS(ON)=14mΩ@VGS=4.5V 20.

AFN2014, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

AFN2024S

AFN2302AS

AFN2304AS

AFN2306A

AFN2306AE

AFN2308A

AFN2312A

AFN2316A

AFN2318A

AFN2324A

AFN2324BA

AFN2326BS

AFN2326S

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