AFN2302AS mosfet equivalent, n-channel mosfet.
z 20V/3.6A,RDS(ON)=70mΩ@VGS=4.5V z 20V/3.1A,RDS(ON)=90mΩ@VGS=2.5V z Super high density cell design for extremely
low RDS (ON) z Exceptional on-resistance and maximum DC
c.
Pin Description ( SOT-23 )
AFN2302AS
20V N-Channel Enhancement Mode MOSFET
Features
z 20V/3.6A,RDS(ON)=70mΩ@VGS=4.5V z.
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