AFN2302AS datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

z 20V/3.6A,RDS(ON)=70mΩ@VGS=4.5V z 20V/3.1A,RDS(ON)=90mΩ@VGS=2.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC c.

Application

Pin Description ( SOT-23 ) AFN2302AS 20V N-Channel Enhancement Mode MOSFET Features z 20V/3.6A,RDS(ON)=70mΩ@VGS=4.5V z.

Description

AFN2302AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other b.

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