AFN2306A mosfet equivalent, n-channel mosfet.
20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=750mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-r.
Pin Description ( SOT-23 )
AFN2306A
20V N-Channel Enhancement Mode MOSFET
Features
20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V.
AFN2306A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.
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