40V/2.6A,RDS(ON)= 68mΩ@VGS=10V 40V/2.2A,RDS(ON)= 88mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current .

Pin Description ( SOT-23 ) AFN2318A 40V N-Channel Enhancement Mode MOSFET Features 40V/2.6A,RDS(ON)= 68mΩ@VGS=10V 40V/.

AFN2318A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.

AFN2318A

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts