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AFN2306AE - N-Channel MOSFET

Download the AFN2306AE datasheet PDF. This datasheet also covers the AFN2306AE-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFN2306AE, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=750mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protected SOT-23 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN2306AE-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN2306AE
Manufacturer Alfa-MOS
File Size 721.20 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN2306AE Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFN2306A N-Channel MOSFET
AFN2302AS N-Channel MOSFET
AFN2304AS N-Channel MOSFET
AFN2308A 60V N-Channel MOSFET
AFN2312A 20V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN2306AE, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFN2306AE 20V N-Channel Enhancement Mode MOSFET Features 20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=750mΩ@VGS=1.