20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=750mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-r.

Pin Description ( SOT-23 ) AFN2306AE 20V N-Channel Enhancement Mode MOSFET Features 20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20.

AFN2306AE, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other b.

AFN2306A

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AFN2324BA

AFN2326BS

AFN2326S

AFN2330

AFN2330A

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