30V/2.4A,RDS(ON)=65mΩ@VGS=10V 30V/2.0A,RDS(ON)=90mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-23 package design Application Power Management.

Pin Description ( SOT-23 ) AFN2304AS 30V N-Channel Enhancement Mode MOSFET Features 30V/2.4A,RDS(ON)=65mΩ@VGS=10V 30V/.

AFN2304AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

AFN2302AS

AFN2306A

AFN2306AE

AFN2308A

AFN2312A

AFN2316A

AFN2318A

AFN2324A

AFN2324BA

AFN2326BS

AFN2326S

AFN2330

AFN2330A

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