AFN2408WS Datasheet, Alfa-MOS

z 30V/5.6A,RDS(ON)=25mΩ@VGS=10V z 30V/5.2A,RDS(ON)=28mΩ@VGS=4.5V z 30V/4.2A,RDS(ON)=34mΩ@VGS=2.5V z Super high density cell design for extremely low RDS (ON) z DFN2X2-6L .

Pin Description ( DFN2X2-6L ) AFN2408WS 30V N-Channel Enhancement Mode MOSFET Features z 30V/5.6A,RDS(ON)=25mΩ@VGS=10V.

AFN2408WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.