z 40V/ 9A,RDS(ON)= 20mΩ@VGS=10V z 40V/ 7A,RDS(ON)= 25mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN2X2-6L package design Application z DC/.

Pin Description ( DFN2X2-6L ) AFN2440WS 40V N-Channel Enhancement Mode MOSFET Features z 40V/ 9A,RDS(ON)= 20mΩ@VGS=10V.

AFN2440WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

AFN2442W

AFN2444WS

AFN2448WS

AFN2408WS

AFN2416W

AFN2014

AFN2024S

AFN2302AS

AFN2304AS

AFN2306A

AFN2306AE

AFN2308A

AFN2312A

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