z 100V/3.2A,RDS(ON)=120mΩ@VGS=10V z 100V/2.6A,RDS(ON)=130mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN2X2-6L package design Application z.

Pin Description ( DFN2X2-6L ) AFN2416W 100V N-Channel Enhancement Mode MOSFET Features z 100V/3.2A,RDS(ON)=120mΩ@VGS=1.

AFN2416W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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AFN2440WS

AFN2442W

AFN2444WS

AFN2448WS

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AFN2302AS

AFN2304AS

AFN2306A

AFN2306AE

AFN2308A

AFN2312A

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