z 30V/3.0A,RDS(ON)=15mΩ@VGS=10V z 30V/3.0A,RDS(ON)=20mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN2X2-6L package design Application z DC/.

Pin Description ( DFN2X2-6L ) AFN2444WS 30V N-Channel Enhancement Mode MOSFET Features z 30V/3.0A,RDS(ON)=15mΩ@VGS=10V.

AFN2444WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

AFN2440WS

AFN2442W

AFN2448WS

AFN2408WS

AFN2416W

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AFN2302AS

AFN2304AS

AFN2306A

AFN2306AE

AFN2308A

AFN2312A

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