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WFD830 - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

  • 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 32nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

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Datasheet Details

Part number WFD830
Manufacturer Winsemi
File Size 610.58 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFD830 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Free Datasheet http://www.nDatasheet.com D830 WF WFD Silicon N-Channel MOSFET Features ■ 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.