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WPM2065A - Single P-Channel Power MOSFET

General Description

The WPM2065A is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance.
  • Extremely Low Threshold Voltage.
  • ESD protection.
  • Small package DFN2x2-6L.

📥 Download Datasheet

Datasheet Details

Part number WPM2065A
Manufacturer WillSEMI
File Size 1.48 MB
Description Single P-Channel Power MOSFET
Datasheet download datasheet WPM2065A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WPM2065A Single P-Channel, -20V, -9.4A, Power MOSFET VDS (V) Max. RDS(on) (mΩ) 21 @ VGS=-4.5V -20 28 @ VGS=-2.5V 43 @ VGS=-1.8V ESD Rating: 2000V HBM Descriptions The WPM2065A is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2065A is Pb-free. WPM2065A Http://www.sh-willsemi.