• Part: WPM2006
  • Description: Power MOSFET and Schottky Diode
  • Category: MOSFET
  • Manufacturer: WillSEMI
  • Size: 904.23 KB
Download WPM2006 Datasheet PDF
WillSEMI
WPM2006
Features z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design z Ultra Low VF Schottky DFN2- 2 -6L Applications z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Motors z Power Management in Portable, Battery Powered Products MOSFET MAXIMUM RATINGS (TJ = 25ć unless otherwise noted) Parameter DrainŦtoŦSource Voltage GateŦtoŦSource Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State t≤5s Steady State t≤5s TA = 25°C TA = 85°C TA = 25°C TA = 25°C Continuous Drain Current (Note 2) Power Dissipation (Note 2) Steady State TA = 25°C TA = 85°C TA = 25°C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Symbol VDSS VGS ID PD IDM TJ, TSTG Source Current (Body Diode) (Note 2) Value Ŧ20 ±8.0 Ŧ3 Ŧ2.3 Ŧ4.1 2.3 Ŧ2.0 Ŧ1.5 Ŧ20 Ŧ55 to 150 Ŧ2 Unit V V A W A °C A 1. Surface Mounted on FR4 Board using 1...