WPM2005B
Features z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design z Ultra Low VF Schottky
Applications z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Motors z Power Management in Portable, Battery Powered Products
DFN3×2-8L
MOSFET MAXIMUM RATINGS (TJ = 25ć unless otherwise noted)
Parameter
Symbol
Value
Units
Drain-Source voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed Power Dissipation Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient
VDSS VGS ID IDM PD TJ Tstg R- JA
-20 f8 -2.7
-10 1.1 150 -55~150 110
V V A A W ć ć ć/W
SCHOTTKY DIODE MAXIMUM RATINGS(TJ = 25ć unless otherwise noted)
Parameter
Symbol
Limits
Unit
Peak repetitive reverse voltage .
DC Blocking voltage
Average rectified forward current
VRRM VR IF
20 20 1
V V A pin connections:
Marking:
J =...
