WPM2005
Features z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design z Ultra Low VF Schottky
Applications z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Motors z Power Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS (TJ = 25ć unless otherwise noted)
Parameter
DrainïtoïSource Voltage
GateïtoïSource Voltage
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Steady State t≤5s
Steady State t≤5s
TJ = 25°C TJ = 85°C TJ = 25°C
TJ = 25°C
Pulsed Drain Current tp = 10 ms
Operating Junction and Storage Temperature
Symbol VDS VGS ID
IDM TJ, TSTG
Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IS TL
Value ï20 ±8.0 ï2.9 ï1.8 ï3.7 1.4
2.2 ï13 ï55 to 150 1.7 260
Units V V A
A °C A °C
DFN3×2-8L
D 1
8 pin connections:
Marking:
1. Surface Mounted on FR4...
