WPM2065 - MOSFET

WillSEMI

General Description

The WPM2065 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

Trench Technology.
Supper high density cell design.
Excellent ON resistance for higher DC current.
Extremely Low Threshold Voltage.
HBM ESD protection > 4kV.
Small package DFN2X2-6L.

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WPM2065 mosfet by WillSEMI - Datasheet Preview

Datasheet Details

Part number	WPM2065
Manufacturer	WillSEMI
File Size	254.94 KB
Description	MOSFET
Datasheet	WPM2065 Datasheet

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Other Datasheets by WillSEMI

Part Number	Description
WPM2065A	Single P-Channel Power MOSFET
WPM2005	Power MOSFET and Schottky Diode
WPM2005B	Power MOSFET and Schottky Diode
WPM2006	Power MOSFET and Schottky Diode
WPM2009D	P-MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WPM2065 Single P-Channel, -20V, -6.9A, Power MOSFET VDS (V) Typical Rds(on) (Ω) 0.017@ VGS=-4.5V -20 0.022@ VGS=-2.5V 0.032@ VGS=-1.8V ESD Rating: 4000V HBM Descriptions The WPM2065 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2065 is Pb-free and Halogen-free. WPM2065 Http://www.sh-willsemi.