WPM2015
Features
- VDS (V) =-20V
- ID =-2.4 A
- RDS(ON) ＜ 110mΩ (VGS =-4.5V)
- RDS(ON) ＜ 150mΩ (VGS =-2.5V)
- Supper high density cell design
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
0.95 +0.1 -0.1 1.9 +0.1 -0.1
D 3
0-0.1 +0.10.38
-0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1 +0.05 -0.01
1. Gate 2. Source 3. Drain
12 GS
- Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note.1)
Ta=25°C Ta=70°C
Power Dissipation
(Note.1)
Ta=25°C Ta=70°C
Continuous Drain Current
(Note.2)
Ta=25°C Ta=70°C
Power Dissipation Pulsed Drain Current
(Note.2) (Note.3)
Ta=25°C Ta=70°C
Thermal Resistance.Junction-...
