• Part: WPM2009D
  • Description: P-MOSFET
  • Category: MOSFET
  • Manufacturer: WillSEMI
  • Size: 193.15 KB
Download WPM2009D Datasheet PDF
WillSEMI
WPM2009D
Features z Max Rds(on) 42mŸ @ Vgs=-4.5V z Max Vds -20V z Max Current -4.0A z Typical Vgs(th) -0.65V @ Id=-250u A z Power Dissipation 2.0W (Note2) z High performance Trench process z DFN3x3-8L Package z Pb-Free Applications z Battery charging z Load Switch z Power Switch z DC-DC converter Pin Connection Top WPM2009 = Part Number YY = Year WW = Week Marking Order Information Device Package Shipping WPM2009D-8/TR DFN3x3-8L 3000/Tape&Reel Will Semiconductor Ltd. Jan,2012 - Rev. 1.4 Maximum Ratings (TA=25o C unless otherwise noted) Symbol Parameter VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Drain Current - Continue Note1 Drain Current - Continue (t<5s) Note1 ID Drain Current - Continue Note2 Drain Current - Pulsed (t<300us, Duty<2%) Note2 Power Dissipation - Note1 PD Power Dissipation - (t<5s) Note1 Power Dissipation - Note2 TJ Operation junction temperature range TSG Storage temperature range Ratings -20 Œ12 -4.0 -4.9 -6.5 -24 1.0 1.5 2.0...