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CHA3063-99F - Driver Amplifier

Description

The CHA3063-99F is a two-stage general purpose monolithic medium power amplifier.The backside of the chip is both RF and DC grounded.This helps to simplify the assembly process.

Features

  • Broadband performance: 5.5-23GHz.
  • 21dBm output power (Psat).
  • 19dB gain,  1dB gain flatness.
  • Typical PAE:11% @ P-1dB comp.
  • Chip size: 1.33 x 0.910x 0.1mm Gain Rlosses & NF ( dB ) 24 20 dBS21 16 12 8 NF 4 0 -4 -8 dBS11 -12 -16 dBS22 -20 -24 2 4 6 8 10 12 14 16 18 20 22 24 Frequency ( GHz ) Typical On wafer measurements Main Electrical Characteristics Tamb = +25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 5.5 23 GHz G.

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Datasheet Details

Part number CHA3063-99F
Manufacturer United Monolithic Semiconductors
File Size 339.37 KB
Description Driver Amplifier
Datasheet download datasheet CHA3063-99F Datasheet
Additional preview pages of the CHA3063-99F datasheet.

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Full PDF Text Transcription

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CHA3063-99F 5.5-23GHz Driver Amplifier GaAs Monolithic Microwave IC Description The CHA3063-99F is a two-stage general purpose monolithic medium power amplifier.The backside of the chip is both RF and DC grounded.This helps to simplify the assembly process. The circuit is manufactured with a pHemt process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features  Broadband performance: 5.5-23GHz  21dBm output power (Psat)  19dB gain,  1dB gain flatness  Typical PAE:11% @ P-1dB comp.  Chip size: 1.33 x 0.910x 0.
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