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CHA3090-98F - 81-86GHz Medium Power Amplifier

Description

The CHA3090-98F is a three-stage monolithic Medium Power Amplifier.

This circuit includes a power detector which integrates a directional coupler, a detection diode and a reference diode to be used in differential mode.

Features

  • Broadband performances: 81-86GHz.
  • 13dB linear gain.
  • 17dBm power at 1dB compression.
  • 20dB power detector dynamic range.
  • BCB layer protection.
  • DC bias: Vd=3.5V@Id=280mA.
  • Chip size 3.36x1.78x0.07mm 22 20 18 16 14 12 10 8 6 79 Output Power (dBm) and Linear Gain (dB) P-1dB P-3dB S21 80 81 82 83 84 85 86 87 Frequency (GHz) 24 22 20 18 16 14 12 10 8 88 Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 81.

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Datasheet Details

Part number CHA3090-98F
Manufacturer United Monolithic Semiconductors
File Size 548.19 KB
Description 81-86GHz Medium Power Amplifier
Datasheet download datasheet CHA3090-98F Datasheet
Additional preview pages of the CHA3090-98F datasheet.

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Full PDF Text Transcription

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CHA3090-98F 81-86GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3090-98F is a three-stage monolithic Medium Power Amplifier. This circuit includes a power detector which integrates a directional coupler, a detection diode and a reference diode to be used in differential mode. It is dedicated to E-band telecommunication, particularly well suited for the new generation of high capacity Backhaul. The circuit is manufactured with a pHEMT process, 0.1µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form with BCB layer protection.
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