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CHA3092-99F - Medium Power Amplifier

Description

stage monolithic medium power amplifier.

systems.

DC grounds.

Features

  • Broadband performances: 20-33GHz.
  • 20dBm output power.
  • 22dB 1.0dB gain.
  • Very good broadband input matching.
  • On chip output power level DC detector.
  • Low DC power consumption, 300mA @ 3.5V.
  • Chip size: 0.88 X 1.72 X 0.10mm Typical on wafer measurements Input Rloss: solid line & output Rloss: dash line Main Characteristics Tamb. = 25°C Symbol Fop G Parameter Operating frequency range Small signal gain Min Typ Max Unit 20 33 GHz 20 22 dB P03 Output p.

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Datasheet preview – CHA3092-99F

Datasheet Details

Part number CHA3092-99F
Manufacturer United Monolithic Semiconductors
File Size 315.90 KB
Description Medium Power Amplifier
Datasheet download datasheet CHA3092-99F Datasheet
Additional preview pages of the CHA3092-99F datasheet.

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Full PDF Text Transcription

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CHA3092-99F 20-33GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3092-99F is a high gain broadband four- stage monolithic medium power amplifier. It is Vd1 designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly IN process. A B.I.T. ( Build In Test ) monitors a DC voltage that is representative of the microwave output power. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vg1 Vg2 Vd2,3,4 DI OUT Vg3,4 Vdet Main Features ■ Broadband performances: 20-33GHz ■ 20dBm output power. ■ 22dB 1.
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