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CHA3023 - 1-18 GHz WIDE BAND AMPLIFIER

Description

The CHA3023 is a travelling wave amplifier using cascode FET.

It is designed for a wide range of applications.

The circuit is manufactured with a PHEMT process of 0.25µm gate length, via holes through the substrate and air bridges and it is available in die form.

Features

  • Broadband performances : 1-18 GHz.
  • 14dB gain.
  • 3dB typical Low Noise Figure.
  • ±0.7 dB gain flatness.
  • Die size : 2.15 X 1.42 X 0.10 mm On wafer measurements Main Characteristics Tamb. = 25° C Symbol Fop G NF Id Parameter Operating frequency range Small signal Gain Noise figure Bias current 95 Min 1 12.5 14 4 dB mA Typ Max 18 Unit GHz ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! DSCHA30235263 - 20 sep 05 1/8 Specifications.

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Datasheet preview – CHA3023

Datasheet Details

Part number CHA3023
Manufacturer United Monolithic Semiconductors
File Size 424.42 KB
Description 1-18 GHz WIDE BAND AMPLIFIER
Datasheet download datasheet CHA3023 Datasheet
Additional preview pages of the CHA3023 datasheet.

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Full PDF Text Transcription

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CHA3023 RoHS COMPLIANT 1-18 GHz WIDE BAND AMPLIFIER GaAs Monolithic Microwave IC www.DataSheet4U.com Description The CHA3023 is a travelling wave amplifier using cascode FET. It is designed for a wide range of applications. The circuit is manufactured with a PHEMT process of 0.25µm gate length, via holes through the substrate and air bridges and it is available in die form. 15 10 Gain & RLoss 5 0 -5 -10 -15 -20 1 3 5 7 9 11 13 15 17 19 Frequency (GHz) dBS11 dBS22 dBS21 Main Features ■ Broadband performances : 1-18 GHz ■ 14dB gain ■ 3dB typical Low Noise Figure ■ ±0.7 dB gain flatness ■ Die size : 2.15 X 1.42 X 0.10 mm On wafer measurements Main Characteristics Tamb.
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