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CHA3024-99F - 2-22GHz Low Noise Amplifier

Description

The CHA3024-99F is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) which operates between 2 and 22GHz.

It is designed for a wide range of applications, such as electronic warfare, X and Ku Point to Point Radio, and test instrumentation.

Features

  • Broadband performances: 2-22GHz.
  • Typical Linear Gain: 15dB.
  • Up to 30 dB adjustable gain with Vg2.
  • P1dB: 18dBm.
  • Psat: 20dBm.
  • OIP3: 30dBm.
  • Typical Noise Figure: 3dB.
  • DC bias: Vd=5V@Id=100mA, Vg1=-0.3V and Vg2=1.7V.
  • Chip dimensions: 3.04 x 1.73 x 0.1mm Performance (dB) Linear Gain, Noise Figure, Return Losses (dB) 20 15 10 5 0 -5 S11(dB) -10 S22(dB) S21(dB) -15 NF(dB) -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) Main E.

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Datasheet Details

Part number CHA3024-99F
Manufacturer United Monolithic Semiconductors
File Size 383.46 KB
Description 2-22GHz Low Noise Amplifier
Datasheet download datasheet CHA3024-99F Datasheet
Additional preview pages of the CHA3024-99F datasheet.

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Full PDF Text Transcription

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CHA3024-99F 2-22GHz LNA with AGC GaAs Monolithic Microwave IC Description The CHA3024-99F is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) which operates between 2 and 22GHz. It is designed for a wide range of applications, such as electronic warfare, X and Ku Point to Point Radio, and test instrumentation. The circuit is manufactured using a 0.15µm gate length pHEMT process, with via holes through the substrate, air bridges and optical gate lithography. The part is supplied as bare die and input and output RF accesses are matched to 50 ohms.
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